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di rice jap [459 articles]

Articoli aggiunti di recente alla biblioteca di rice classificati sotto il tag jap. You can also see everyone's jap.
  • Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb[sup +] ions
    Journal of Applied Physics, Vol. 92, No. 8. (2002), pp. 4336-4341.
    by VA Ignatova, OI Lebedev, U Wätjen, L Van Vaeck, J Van Landuyt, R Gijbels, F Adams
    posted to jap by rice on 2008-06-30 16:52:14 as **
  • Arsenic-related defects in SiO[sub 2]
    Journal of Applied Physics, Vol. 78, No. 3. (1995), pp. 1514-1518.
    by S Alexandrova
    posted to jap by rice on 2008-06-30 16:52:13 as **
  • Range distribution of implanted cesium ions in silicon dioxide films
    Journal of Applied Physics, Vol. 63, No. 12. (1988), pp. 5887-5889.
    by Bruce J Fishbein, James D Plummer
    posted to jap by rice on 2008-06-30 16:52:13 as **
  • Microscopic location of electron traps induced by arsenic implantation in silicon dioxide
    Journal of Applied Physics, Vol. 54, No. 1. (1983), pp. 174-178.
    by S Alexandrova, DR Young
    posted to jap by rice on 2008-06-30 16:52:12 as **
  • Secondary ion mass spectrometry: Depth profiling of shallow As implants in silicon and silicon dioxide
    Journal of Applied Physics, Vol. 56, No. 5. (1984), pp. 1425-1433.
    by W Vandervorst, HE Maes, RF De Keersmaecker
    posted to jap by rice on 2008-06-30 16:52:11 as **
  • Effects of oxidation and nitrogen annealing on ion-implantation-induced interface states in the silicon--silicon dioxide system
    Journal of Applied Physics, Vol. 48, No. 2. (1977), pp. 834-836.
    by DW Hess, AJ Learn
    posted to jap by rice on 2008-06-30 16:52:10 as **
  • Electron trapping and detrapping characteristics of arsenic-implanted SiO[sub 2] layers
    Journal of Applied Physics, Vol. 51, No. 2. (1980), pp. 1085-1101.
    by RF Dekeersmaecker, DJ Dimaria
    posted to jap by rice on 2008-06-30 16:52:09 as **
  • Effects of ion implantation on charges in the silicon--silicon dioxide system
    Journal of Applied Physics, Vol. 48, No. 1. (1977), pp. 308-312.
    by AJ Learn, DW Hess
    posted to jap by rice on 2008-06-30 16:52:09 as **
  • Enhancement of electron mobility in nanocrystalline silicon/crystalline silicon heterostructures
    Journal of Applied Physics, Vol. 97, No. 2. (2005)
    by XY Chen, WZ Shen, YL He
    posted to jap by rice on 2008-05-06 10:07:50 as **
  • Carrier distribution in quantum nanostructures by scanning capacitance microscopy
    Journal of Applied Physics, Vol. 97, No. 1. (2005)
    by F Giannazzo, V Raineri, A La Magna, S Mirabella, G Impellizzeri, AM Piro, F Priolo, E Napolitani, SF Liotta
    posted to jap by rice on 2008-05-06 10:07:39 as **
  • Simple analytical model for 2kT current in forward-biased p-n junctions
    Journal of Applied Physics, Vol. 97, No. 1. (2005)
    by Luigi Abenante
    posted to jap by rice on 2008-05-06 10:07:19 as **
  • Light-induced changes in the gap states above midgap of hydrogenated amorphous silicon
    Journal of Applied Physics, Vol. 97, No. 2. (2005)
    by P Kounavis
    posted to jap by rice on 2008-05-06 10:06:32 as **
  • Vacancy-type defects in strained-Si layers deposited on SiGe/Si structures probed by using monoenergetic positron beams
    Journal of Applied Physics, Vol. 97, No. 2. (2005)
    by Akira Uedono, Nobuyoshi Hattori, Hideki Naruoka, Shoji Ishibashi, Ryoichi Suzuki, Toshiyuki Ohdaira
    posted to jap by rice on 2008-05-06 10:06:31 as **
  • Internal laser probing: A theoretical study of wave propagation effects and the physical limits of measurement accuracy
    Journal of Applied Physics, Vol. 97, No. 2. (2005)
    by Robert Thalhammer
    posted to jap by rice on 2008-05-06 10:06:19 as **
  • Erbium-implanted silicon--germanium
    Journal of Applied Physics, Vol. 97, No. 1. (2005)
    by V Touboltsev, P Jalkanen
    posted to jap by rice on 2008-05-06 10:05:58 as **
  • Thermal activation of As implanted in bulk Si and separation by implanted oxygen
    Journal of Applied Physics, Vol. 96, No. 12. (2004), pp. 7388-7391.
    by M Dalponte, H Boudinov, LV Goncharova, D Starodub, E Garfunkel, T Gustafsson
    posted to jap by rice on 2008-05-06 10:05:55 as **
  • Transport properties of electron-beam and photo excited carriers in high-quality single-crystalline chemical-vapor-deposition diamond films
    Journal of Applied Physics, Vol. 96, No. 12. (2004), pp. 7300-7305.
    by T Teraji, S Yoshizaki, S Mitani, T Watanabe, T Ito
    posted to jap by rice on 2008-05-06 10:05:53 as **
  • Recombination activity and electrical levels of dislocations in p-type Si/SiGe structures: Impact of copper contamination and hydrogenation
    Journal of Applied Physics, Vol. 96, No. 11. (2004), pp. 6425-6430.
    by OF Vyvenko, M Kittler, W Seifert
    posted to jap by rice on 2008-05-06 10:04:22 as **
  • Evidence for capture of holes into resonant states in boron-doped silicon
    Journal of Applied Physics, Vol. 96, No. 9. (2004), pp. 4970-4975.
    by ST Yen, VN Tulupenko, ES Cheng, PK Chung, CP Lee, AT Dalakyan, KA Chao
    posted to jap by rice on 2008-05-06 10:02:53 as **
  • General theory of carrier lifetime in semiconductors with multiple localized states
    Journal of Applied Physics, Vol. 96, No. 11. (2004), pp. 6454-6469.
    by Didier Debuf
    posted to jap by rice on 2008-05-06 10:02:18 as **
  • Photobleaching Comparison of Poly(methylphenylsilylene) and Poly(phenylsilyne)
    Journal of Applied Physics, Vol. 96, No. 11. (2004), pp. 6313-6318.
    by Jr, Kelly S Potter, Carol C Phifer, Jr, Gregory M Jamison, Jess E Jones, Jr
    posted to jap by rice on 2008-05-06 10:01:58 as **
  • Response time analysis of SiGe/Si modulation-doped multiple-quantum-well structures for optical modulation
    Journal of Applied Physics, Vol. 96, No. 11. (2004), pp. 6109-6112.
    by Delphine Marris, Eric Cassan, Laurent Vivien
    posted to jap by rice on 2008-05-06 10:01:56 as **
  • Ion-beam-induced amorphization and recrystallization in silicon
    Journal of Applied Physics, Vol. 96, No. 11. (2004), pp. 5947-5976.
    by Lourdes Pelaz, Luis A Marqués, Juan Barbolla
    posted to jap by rice on 2008-05-06 10:01:54 as **
  • Parameters required to simulate electric characteristics of SiC devices for n-type 4H--SiC
    Journal of Applied Physics, Vol. 96, No. 10. (2004), pp. 5601-5606.
    by Sou Kagamihara, Hideharu Matsuura, Tetsuo Hatakeyama, Takatoshi Watanabe, Mitsuhiro Kushibe, Takashi Shinohe, Kazuo Arai
    posted to jap by rice on 2008-05-06 10:01:53 as **
  • Spectral self-interference fluorescence microscopy
    Journal of Applied Physics, Vol. 96, No. 9. (2004), pp. 5311-5315.
    by L Moiseev, CR Cantor, MI Aksun, M Dogan, BB Goldberg, AK Swan, MS ünlü
    posted to jap by rice on 2008-05-06 10:01:46 as **
  • A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon
    Journal of Applied Physics, Vol. 96, No. 9. (2004), pp. 4866-4877.
    by Christophe J Ortiz, Peter Pichler, Tim Fühner, Filadelfo Cristiano, Benjamin Colombeau, Nicholas EB Cowern, Alain Claverie
    posted to jap by rice on 2008-05-06 10:01:44 as **
  • Carrier and defect dynamics in photoexcited semi-insulating epitaxial GaN layers
    Journal of Applied Physics, Vol. 96, No. 8. (2004), pp. 4326-4333.
    by E Gaubas, S Jursenas, S Miasojedovas, J Vaitkus, A Zukauskas
    posted to jap by rice on 2008-05-06 09:59:25 as **
  • Two-bands charge transport in silicon nitride due to phonon-assisted trap ionization
    Journal of Applied Physics, Vol. 96, No. 8. (2004), pp. 4293-4296.
    by KA Nasyrov, VA Gritsenko, Yu, EH Lee, SY Yoon, CW Kim
    posted to jap by rice on 2008-05-06 09:59:23 as **
  • Perturbation of charges in AlGaN/GaN heterostructures by ultraviolet laser illumination
    Journal of Applied Physics, Vol. 96, No. 8. (2004), pp. 4253-4262.
    by G Koley, Ho Y Cha, Jeonghyun Hwang, WJ Schaff, LF Eastman, MG Spencer
    posted to jap by rice on 2008-05-06 09:59:21 as **
  • Optical constants of porous silicon films and multilayers determined by genetic algorithms
    Journal of Applied Physics, Vol. 96, No. 8. (2004), pp. 4197-4203.
    by Torres V Costa, Mart∈ RJ Palma, Mart∈ez JM Duart
    posted to jap by rice on 2008-05-06 09:59:18 as **
  • Investigations of transient phase formation in Ti/Si thin film reaction
    Journal of Applied Physics, Vol. 96, No. 1. (2004), pp. 361-368.
    by Chaix O Pluchery, B Chenevier, I Matko, JP Sénateur, F La Via
    posted to jap by rice on 2008-05-06 09:59:10 as **
  • Chainlike silicon nanowires: Morphology, electronic structure and luminescence studies
    Journal of Applied Physics, Vol. 96, No. 6. (2004), pp. 3447-3451.
    by XH Sun, NB Wong, CP Li, ST Lee, TK Sham
    posted to jap by rice on 2008-05-06 09:59:08 as **
  • Optical properties of N[sup +] ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry
    Journal of Applied Physics, Vol. 96, No. 6. (2004), pp. 3247-3254.
    by Katsunori Kurihara, Shin I Hikino, Sadao Adachi
    posted to jap by rice on 2008-05-06 09:59:06 as **
  • Optical properties of SiO[sub x] nanostructured films by pulsed-laser deposition at different substrate temperatures
    Journal of Applied Physics, Vol. 96, No. 6. (2004), pp. 3180-3186.
    by XY Chen, YF Lu, YH Wu, BJ Cho, WD Song, DY Dai
    posted to jap by rice on 2008-05-06 09:59:04 as **
  • Time-resolved photoluminescence and capacitance--voltage analysis of the neutral vacancy defect in silicon implanted SiO[sub 2] on silicon substrate
    Journal of Applied Physics, Vol. 96, No. 5. (2004), pp. 3025-3027.
    by Gong R Lin, Chun J Lin, Kuo C Yu
    posted to jap by rice on 2008-05-06 09:59:03 as **
  • Determination of bonding structure of Si, Ge, and N incorporated amorphous carbon films by near-edge x-ray absorption fine structure and ultraviolet Raman spectroscopy
    Journal of Applied Physics, Vol. 96, No. 2. (2004), pp. 1013-1018.
    by Hae S Jung, Hyung H Park, IR Mendieta, DA Smith
    posted to jap by rice on 2008-05-06 09:56:45 as **
  • Dynamics of the pump-probe reflectivity spectra in GaAs and GaN
    Journal of Applied Physics, Vol. 95, No. 12. (2004), pp. 7803-7812.
    by SS Prabhu, AS Vengurlekar
    posted to jap by rice on 2008-05-06 09:56:32 as **
  • An electrical characterization of a two-dimensional electron gas in GaN/AlGaN on silicon substrates
    Journal of Applied Physics, Vol. 95, No. 12. (2004), pp. 7982-7989.
    by S Elhamri, R Berney, WC Mitchel, WD Mitchell, JC Roberts, P Rajagopal, T Gehrke, EL Piner, KJ Linthicum
    posted to jap by rice on 2008-05-06 09:56:20 as ** along with 1 person dharma
  • Theory of polarization dependent intersubband transitions in p-type SiGe/Si self-assembled quantum dots
    Journal of Applied Physics, Vol. 96, No. 2. (2004), pp. 1059-1063.
    by Yih Y Lin, Jasprit Singh
    posted to jap by rice on 2008-05-06 09:56:17 as **
  • Enhancement of infrared transmission in GaSb bulk crystals by carrier compensation
    Journal of Applied Physics, Vol. 96, No. 2. (2004), pp. 1064-1067.
    by R Pino, Y Ko, PS Dutta
    posted to jap by rice on 2008-05-06 09:56:15 as **
  • The depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire
    Journal of Applied Physics, Vol. 96, No. 2. (2004), pp. 1120-1126.
    by Y Huang, XD Chen, S Fung, CD Beling, CC Ling, ZF Wei, SJ Xu, CY Zhi
    posted to jap by rice on 2008-05-06 09:56:13 as **
  • Comparative study of photoluminescence of undoped and erbium-doped size-controlled nanocrystalline Si/SiO[sub 2] multilayered structures
    Journal of Applied Physics, Vol. 96, No. 4. (2004), pp. 2254-2260.
    by Yu, MG Lisachenko, OA Shalygina, BV Kamenev, DM Zhigunov, SA Teterukov, PK Kashkarov, J Heitmann, M Schmidt, M Zacharias
    posted to jap by rice on 2008-05-06 09:56:11 as **
  • Frequency-domain “single-shot” ultrafast transient absorption spectroscopy using chirped laser pulses
    Journal of Applied Physics, Vol. 96, No. 1. (2004), pp. 25-33.
    by Ilya A Shkrob, Dmitri A Oulianov, Robert A Crowell, Stanislas Pommeret
    posted to jap by rice on 2008-05-06 09:56:10 as **
  • Interface instabilities and electronic properties of ZrO[sub 2] on silicon (100)
    Journal of Applied Physics, Vol. 96, No. 5. (2004), pp. 2665-2673.
    by CC Fulton, Jr, G Lucovsky, RJ Nemanich
    posted to jap by rice on 2008-05-06 09:55:58 as **
  • Analytic light---or radiation---induced pn junction photocurrent solutions to the multidimensional ambipolar diffusion equation
    Journal of Applied Physics, Vol. 96, No. 5. (2004), pp. 2646-2655.
    by CL Axness, B Kerr, TF Wunsch
    posted to jap by rice on 2008-05-06 09:55:46 as **
  • Spatial distribution of cavities in silicon formed by ion implantation generated excess vacancies
    Journal of Applied Physics, Vol. 95, No. 9. (2004), pp. 4738-4741.
    by A Peeva, R Kögler, W Skorupa, JS Christensen, Yu
    posted to jap by rice on 2008-05-06 09:53:03 as **
  • Spectroscopic analysis of electrical properties in polar semiconductors with over-damped plasmons
    Journal of Applied Physics, Vol. 95, No. 7. (2004), pp. 3541-3546.
    by S Nakashima, H Harima
    posted to jap by rice on 2008-05-06 09:53:02 as **
  • Recovery of the carrier density in arsenic-doped silicon after high energy (2 MeV) Si[sup +] implantation
    Journal of Applied Physics, Vol. 95, No. 11. (2004), pp. 6092-6097.
    by D Nobili, S Solmi, M Ferri, M Attari
    posted to jap by rice on 2008-05-06 09:52:56 as **
  • Influence of internal fields on radiative and nonradiative processes in AlN/GaN superlattices
    Journal of Applied Physics, Vol. 95, No. 12. (2004), pp. 7785-7789.
    by CE Martinez, NM Stanton, AJ Kent, CR Staddon, SV Novikov, CT Foxon
    posted to jap by rice on 2008-05-06 09:52:52 as **
  • Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides
    Journal of Applied Physics, Vol. 95, No. 11. (2004), pp. 6048-6053.
    by YF Chong, HJL Gossmann, MO Thompson, S Yang, KL Pey, ATS Wee
    posted to jap by rice on 2008-05-06 09:52:45 as **
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