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di rice library [1360 articles]

Articoli aggiunti di recente nella biblioteca di rice ordered by to_read.
  • Application of Fourier Transform Infrared Ellipsometry to Assess the Concentration of Biological Molecules
    Appl. Opt., Vol. 41, No. 34. (2 December 2002), pp. 7339-7345.
    by Enric Garcia-Caurel, Bernard Drévillon, Antonello De Martino, Laurent Schwartz
    posted to no-tag by rice on 2008-09-01 07:41:49 as **
  • Free carriers reactivation on p+-mesoporous silicon through ammonia adsorption: a FTIR study
    Sensors and Actuators B: Chemical, Vol. 100, No. 1-2. (1 June 2004), pp. 205-208.
    by F Geobaldo, P Rivolo, GP Salvador, G Amato, L Boarino, E Garrone
    posted to no-tag by rice on 2008-06-30 17:05:40 as **
  • Heavy carriers, non-drude optical conductivity and transfer of spectral weight in MnSi
    Journal of Magnetism and Magnetic Materials, Vol. 272-276, No. Supplement 1. (May 2004), pp. E53-E55.
    by FP Mena, A Damascelli, D van der Marel, M Fath, AA Menovsky, JA Mydosh
    posted to no-tag by rice on 2008-06-30 17:05:38 as **
  • Non-Arrhenius ionic conductivity in optimized fast ion conducting glasses: application of the Drude model to ion-ion scattering
    Journal of Non-Crystalline Solids, Vol. 307-310 (September 2002), pp. 981-991.
    by Steve W Martin, Jeremy Schrooten, Ben Meyer
    posted to no-tag by rice on 2008-06-30 17:05:37 as **
  • Optical conductivity of oxides
    Materials Science and Engineering: R: Reports, Vol. 39, No. 2-3. (1 October 2002), pp. 29-92.
    by François Gervais
    posted to no-tag by rice on 2008-06-30 17:05:36 as **
  • Interrelation between nanostructure and optical properties of oxide thin films by spectroscopic ellipsometry
    Surface and Coatings Technology, Vol. 151-152 (1 March 2002), pp. 2-8.
    by M Losurdo, D Barreca, P Capezzuto, G Bruno, E Tondello
    posted to no-tag by rice on 2008-06-30 17:05:35 as **
  • Non-destructive characterisation of doped Si and SiGe epilayers using FTIR spectroscopic ellipsometry (FTIR-SE)
    Materials Science and Engineering B, Vol. 89, No. 1-3. (14 February 2002), pp. 146-150.
    by C Pickering, WY Leong, JL Glasper, P Boher, Piel
    posted to no-tag by rice on 2008-06-30 17:05:35 as **
  • Drude absorption and electron localization in GaAs/AlGaAs superlattices
    Physica B: Condensed Matter, Vol. 272, No. 1-4. (1 December 1999), pp. 183-186.
    by K Tamura, K Hirakawa, Y Shimada
    posted to no-tag by rice on 2008-06-30 17:05:33 as **
  • Review and analysis of refractive index temperature dependence in amorphous SiO2
    Journal of Non-Crystalline Solids (September 1998), pp. 30-36.
    by CZ Tan
    posted to no-tag by rice on 2008-06-30 17:01:58 as **
  • Self-diffusion and impurity diffusion in silicon dioxide
    Journal of Phase Equilibria and Diffusion, Vol. 26, No. 5. (2005), pp. 547-554.
    by Masashi Uematsu
    posted to no-tag by rice on 2008-06-30 16:57:41 as **
  • Long-range effects in ion-implanted silicon-silicon-dioxide structures
    Technical Physics Letters, Vol. 23, No. 10. (17 October 1997), pp. 786-787.
    by A Baraban, L Malyavka
    posted to no-tag by rice on 2008-06-30 16:57:29 as **
  • Optical functions of the Drude model: transformation of the spectra over wide ranges of parameters
    Low Temperature Physics, Vol. 27, No. 3. (2001), pp. 216-227.
    by AI Galuza, AB Beznosov
    posted to no-tag by rice on 2008-06-30 16:55:21 as **
  • Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb[sup +] ions
    Journal of Applied Physics, Vol. 92, No. 8. (2002), pp. 4336-4341.
    by VA Ignatova, OI Lebedev, U Wätjen, L Van Vaeck, J Van Landuyt, R Gijbels, F Adams
    posted to jap by rice on 2008-06-30 16:52:14 as **
  • Arsenic-related defects in SiO[sub 2]
    Journal of Applied Physics, Vol. 78, No. 3. (1995), pp. 1514-1518.
    by S Alexandrova
    posted to jap by rice on 2008-06-30 16:52:13 as **
  • Range distribution of implanted cesium ions in silicon dioxide films
    Journal of Applied Physics, Vol. 63, No. 12. (1988), pp. 5887-5889.
    by Bruce J Fishbein, James D Plummer
    posted to jap by rice on 2008-06-30 16:52:13 as **
  • Microscopic location of electron traps induced by arsenic implantation in silicon dioxide
    Journal of Applied Physics, Vol. 54, No. 1. (1983), pp. 174-178.
    by S Alexandrova, DR Young
    posted to jap by rice on 2008-06-30 16:52:12 as **
  • Secondary ion mass spectrometry: Depth profiling of shallow As implants in silicon and silicon dioxide
    Journal of Applied Physics, Vol. 56, No. 5. (1984), pp. 1425-1433.
    by W Vandervorst, HE Maes, RF De Keersmaecker
    posted to jap by rice on 2008-06-30 16:52:11 as **
  • Effects of oxidation and nitrogen annealing on ion-implantation-induced interface states in the silicon--silicon dioxide system
    Journal of Applied Physics, Vol. 48, No. 2. (1977), pp. 834-836.
    by DW Hess, AJ Learn
    posted to jap by rice on 2008-06-30 16:52:10 as **
  • Electron trapping and detrapping characteristics of arsenic-implanted SiO[sub 2] layers
    Journal of Applied Physics, Vol. 51, No. 2. (1980), pp. 1085-1101.
    by RF Dekeersmaecker, DJ Dimaria
    posted to jap by rice on 2008-06-30 16:52:09 as **
  • Effects of ion implantation on charges in the silicon--silicon dioxide system
    Journal of Applied Physics, Vol. 48, No. 1. (1977), pp. 308-312.
    by AJ Learn, DW Hess
    posted to jap by rice on 2008-06-30 16:52:09 as **
  • Determination of the carrier concentration in InGaAsN/GaAs single quantum wells using Raman scattering
    Applied Physics Letters, Vol. 85, No. 21. (2004), pp. 4905-4907.
    by Patrick A Grandt, Aureus E Griffith, MO Manasreh, DJ Friedman, S Dogan, D Johnstone
    posted to apl by rice on 2008-06-30 16:39:31 as **
  • Oxygen effects on arsenic diffusion in silicon dioxide
    Applied Physics Letters, Vol. 32, No. 2. (1978), pp. 117-119.
    by Katsuhiro Tsukamoto, Yoichi Akasaka, Kazuo Horie
    posted to apl by rice on 2008-06-30 16:39:29 as **
  • Characterization of cesium diffusion in silicon dioxide films using backscattering spectrometry
    Applied Physics Letters, Vol. 50, No. 17. (1987), pp. 1200-1202.
    by Bruce J Fishbein, James D Plummer
    posted to apl by rice on 2008-06-30 16:39:27 as **
  • Fast diffusion component of ion-implanted arsenic in thermally grown silicon dioxide
    Applied Physics Letters, Vol. 53, No. 3. (1988), pp. 189-191.
    by Tong S Lee, P Fellinger
    posted to apl by rice on 2008-06-30 16:39:26 as **
  • Rapid thermal anneal of hydrogen-implanted metal-silicon nitride-silicon dioxide-silicon structure
    Applied Physics Letters, Vol. 56, No. 14. (1990), pp. 1336-1338.
    by BS Panwar, AB Bhattacharyya
    posted to apl by rice on 2008-06-30 16:39:25 as **
  • Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films
    Applied Physics Letters, Vol. 71, No. 22. (1997), pp. 3215-3217.
    by J von Borany, R Grötzschel, KH Heinig, A Markwitz, W Matz, B Schmidt, W Skorupa
    posted to apl by rice on 2008-06-30 16:39:24 as **
  • Infrared studies of silicon oxide formation in silicon wafers implanted with oxygen
    Applied Physics Letters, Vol. 72, No. 22. (1998), pp. 2853-2855.
    by Haruhiko Ono, Taeko Ikarashi, Atsushi Ogura
    posted to apl by rice on 2008-06-30 16:39:23 as **
  • Room-temperature, short-wavelength (400--500 nm) photoluminescence from silicon-implanted silicon dioxide films
    Applied Physics Letters, Vol. 68, No. 17. (1996), pp. 2410-2412.
    by W Skorupa, RA Yankov, IE Tyschenko, H Fröb, T Böhme, K Leo
    posted to apl by rice on 2008-06-30 16:39:22 as **
  • Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers
    Applied Physics Letters, Vol. 71, No. 19. (1997), pp. 2809-2811.
    by L Rebohle, J von Borany, RA Yankov, W Skorupa, IE Tyschenko, H Fröb, K Leo
    posted to apl by rice on 2008-06-30 16:39:21 as **
  • Coulombic and neutral trapping centers in silicon dioxide
    Physical Review B, Vol. 43, No. 2. (15 January 1991), 1471.
    by DA Buchanan, MV Fischetti, DJ Dimaria
    posted to physrev by rice on 2008-06-30 16:32:18 as **
  • Theory of Spin Hall Effect: Extension of the Drude Model
    Physical Review Letters, Vol. 99, No. 20. (2007)
    by Eugene M Chudnovsky
    posted to physrev by rice on 2008-06-30 16:32:08 as **
  • Generalized Drude approach to the conductivity relaxation time due to electron-hole collisions in optically excited semiconductors
    Physical Review B, Vol. 40, No. 18. (15 December 1989), 12438.
    by Bo E Sernelius
    posted to physrev by rice on 2008-06-30 16:32:06 as **
  • Unified Description of Charge-Carrier Mobilities in Disordered Semiconducting Polymers
    Physical Review Letters, Vol. 94, No. 20. (May 2005), 206601.
    by WF Pasveer, J Cottaar, C Tanase, R Coehoorn, PA Bobbert, PW Blom, DM de Leeuw, MA Michels
    posted to physrev by rice on 2008-06-21 05:38:44 as ** along with 1 person merodrig
  • Erratum: Monovacancy and Interstitial Migration in Ion-Implanted Silicon [Phys. Rev. Lett. [bold 98], 265502 (2007)]
    Physical Review Letters, Vol. 99, No. 18. (2007)
    by PG Coleman, CP Burrows
    posted to physrev by rice on 2008-06-21 05:37:46 as **
  • Monovacancy and Interstitial Migration in Ion-Implanted Silicon
    Physical Review Letters, Vol. 98, No. 26. (2007)
    by PG Coleman, CP Burrows
    posted to physrev by rice on 2008-06-21 05:37:45 as **
  • Mechanism of Carrier Photogeneration and Carrier Transport in Molecular Crystal Tetracene
    Physical Review Letters, Vol. 97, No. 6. (2006)
    by Daniel Moses, Cesare Soci, Xialiou Chi, Arthur P Ramirez
    posted to physrev by rice on 2008-06-21 05:37:44 as **
  • Experimental Evidence of Dislocation Related Shallow States in p-Type Si
    Physical Review Letters, Vol. 95, No. 7. (2005)
    by A Castaldini, D Cavalcoli, A Cavallini, S Pizzini
    posted to physrev by rice on 2008-06-21 05:37:42 as **
  • Primary Photoexcitations and the Origin of the Photocurrent in Rubrene Single Crystals
    Physical Review Letters, Vol. 96, No. 5. (2006)
    by Hikmat Najafov, Ivan Biaggio, Vitaly Podzorov, Matthew F Calhoun, Michael E Gershenson
    posted to physrev by rice on 2008-06-21 05:37:41 as ** along with 1 person bxk
  • Excitonic Absorption above the Mott Transition in Si
    Physical Review Letters, Vol. 91, No. 24. (December 2003), 246401.
    by P Grivickas, V Grivickas, J Linnros
    posted to physrev by rice on 2008-06-21 05:37:18 as **
  • Structure and the Reflectionless/Refractionless Nature of Parabolic Diffusion-Wave Fields
    Physical Review Letters, Vol. 87, No. 2. (20 June 2001), 020801.
    by Andreas Mandelis, Lena Nicolaides, Yan Chen
    posted to physrev by rice on 2008-06-21 05:36:56 as **
  • Measurement of Roughness of Two Interfaces of a Dielectric Film by Scattering Ellipsometry
    Physical Review Letters, Vol. 85, No. 2. (10 July 2000), 349.
    by Thomas A Germer
    posted to physrev by rice on 2008-06-21 05:36:55 as **
  • Stimulated Emission from Donor Transitions in Silicon
    Physical Review Letters, Vol. 84, No. 22. (29 May 2000), 5220.
    by SG Pavlov, Zhukavin, EE Orlova, VN Shastin, AV Kirsanov, HW Hübers, K Auen, H Riemann
    posted to physrev by rice on 2008-06-21 05:36:55 as **
  • Preferential Amorphization at Extended Defects of Self-Ion-Irradiated Silicon
    Physical Review Letters, Vol. 82, No. 4. (25 January 1999), 771.
    by RD Goldberg, JS Williams, RG Elliman
    posted to physrev by rice on 2008-06-21 05:36:53 as **
  • Interaction Induced Electron Self-Interference in a Semiconductor: The Phonon Staircase Effect
    Physical Review Letters, Vol. 78, No. 25. (23 June 1997), 4873.
    by JA Kenrow, El, CJ Stanton
    posted to physrev by rice on 2008-06-21 05:35:03 as **
  • Energetics of Self-Interstitial Clusters in Si
    Physical Review Letters, Vol. 82, No. 22. (31 May 1999), 4460.
    by NEB Cowern, G Mannino, PA Stolk, F Roozeboom, HGA Huizing, JGM van Berkum, F Cristiano, A Claverie, M Jaraíz
    posted to physrev by rice on 2008-06-21 05:33:45 as **
  • Fermi-Level-Pinning Defects in Highly n-Doped Silicon
    Physical Review Letters, Vol. 79, No. 24. (15 December 1997), 4834.
    by DJ Chadi, PH Citrin, CH Park, DL Adler, MA Marcus, HJ Gossmann
    posted to physrev by rice on 2008-06-21 05:33:44 as **
  • Electron Photoinjection from Silicon to Ultrathin SiO2 Films via Ambient Oxygen
    Physical Review Letters, Vol. 77, No. 5. (29 July 1996), 920.
    by J Bloch, JG Mihaychuk, HM van Driel
    posted to physrev by rice on 2008-06-21 05:33:41 as **
  • Non-Gaussian Transport Measurements and the Einstein Relation in Amorphous Silicon
    Physical Review Letters, Vol. 76, No. 17. (22 April 1996), 3196.
    by Qing Gu, EA Schiff, S Grebner, F Wang, R Schwarz
    posted to physrev by rice on 2008-06-21 05:33:40 as **
  • Trap-Limited Migration of Si Self-Interstitials at Room Temperature
    Physical Review Letters, Vol. 76, No. 9. (26 February 1996), 1493.
    by Kyllesbech, V Privitera, S Coffa, F Priolo, SU Campisano, A Carnera
    posted to physrev by rice on 2008-06-21 05:33:39 as **
  • Defect production and annealing in ion-implanted amorphous silicon
    Physical Review Letters, Vol. 70, No. 24. (14 June 1993), 3756.
    by S Coffa, F Priolo, A Battaglia
    posted to physrev by rice on 2008-06-21 05:33:37 as **
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