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di rice Petrik [11 articles]

Articoli recentemente aggiunti di rice nella biblioteca scritti da Petrik. Puoi anche vedere see Petrik di tutti gli articoli.
  • Ellipsometric characterization of damage profiles using an advanced optical model
    Journal of Applied Physics, Vol. 93, No. 4. (2003), pp. 1987-1990.
    by P Petrik, O Polgár, M Fried, T Lohner, NQ Khánh, J Gyulai
    posted to jap by rice on 2008-05-06 09:44:36 as **
  • Ellipsometric study of the polysilicon/thin oxide/single-crystalline silicon structure and its change upon annealing
    Journal of Applied Physics, Vol. 92, No. 5. (2002), pp. 2374-2377.
    by P Petrik, T Lohner, M Fried, J Gyulai, U Boell, R Berger, W Lehnert
    posted to jap by rice on 2008-05-06 09:40:40 as **
  • Ion implantation-caused damage in SiC measured by spectroscopic ellipsometry
    Thin Solid Films, Vol. 455-456 (1 May 2004), pp. 239-243.
    posted to ion-implanted by rice on 2008-04-24 06:27:32 as **
  • Dose-dependence of ion implantation-caused damage in silicon measured by ellipsometry and backscattering spectrometry
    Thin Solid Films, Vol. 455-456 (1 May 2004), pp. 404-409.
    by M Fried, P Petrik, T Lohner, NQ Khánh, O Polgár, J Gyulai
    posted to ion-implanted by rice on 2008-04-24 06:06:00 as **
  • Depth distribution of disorder and cavities in high dose helium implanted silicon characterized by spectroscopic ellipsometry
    Thin Solid Films, Vol. 455-456 (1 May 2004), pp. 344-348.
    posted to ion-implanted by rice on 2008-04-24 06:05:51 as **
  • Ion implantation induced buried disorder studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry
    Vacuum, Vol. 50, No. 3-4. (1 July 1998), pp. 487-490.
    by T Lohner, P Petrik, O Polgár, NQ Khánh, M Fried, J Gyulai
    posted to se by rice on 2008-04-24 04:53:44 as **
  • Ion implantation-caused damage depth profiles in single-crystalline silicon studied by Spectroscopic Ellipsometry and Rutherford Backscattering Spectrometry
    Vacuum, Vol. 50, No. 3-4. (1 July 1998), pp. 293-297.
    by P Petrik, O Polgár, T Lohner, M Fried, NQ Khánh, J Gyulai
    posted to se by rice on 2008-04-24 04:53:42 as **
  • Si nanocrystals in silicon nitride: An ellipsometric study using parametric semiconductor models
    Physica E: Low-dimensional Systems and Nanostructures, Vol. 38, No. 1-2. (April 2007), pp. 76-79.
    by P Basa, P Petrik, M Fried, L Dobos, B Pécz, L Tóth
    posted to se by rice on 2008-04-24 04:19:27 as **
  • In situ spectroscopic ellipsometry for the characterization of polysilicon formation inside a vertical furnace
    Thin Solid Films, Vol. 364, No. 1-2. (27 March 2000), pp. 150-155.
    posted to se by rice on 2008-04-24 04:05:47 as **
  • In situ measurement of the crystallization of amorphous silicon in a vertical furnace using spectroscopic ellipsometry
    Thin Solid Films, Vol. 383, No. 1-2. (15 February 2001), pp. 235-240.
    posted to se by rice on 2008-04-24 04:05:45 as **
  • Ellipsometric characterization of oxidized porous silicon layer structures
    Materials Science and Engineering B, Vol. 69-70 (14 January 2000), pp. 182-187.
    by T Lohner, M Fried, P Petrik, O Polgár, J Gyulai, W Lehnert
    posted to se by rice on 2008-04-23 17:51:18 as **
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