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Tag hfo2 [13 articles]

Articoli recentemente classificati sotto il tag hfo2.
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  • Etch characteristics of HfO2 films on Si substrates
    Applied Surface Science, Vol. 187, No. 1-2. (14 February 2002), pp. 75-81.
    by S Norasetthekul, PY Park, KH Baik, KP Lee, JH Shin, BS Jeong, V Shishodia, DP Norton, SJ Pearton
    posted to dielectric hfo2 high-k by these_morel on 2006-02-21 09:28:42 as **
  • Plasma etching of high dielectric constant materials on silicon in halogen chemistries
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 1. (2004), pp. 88-95.
    by Lin Sha, Jane P Chang
    posted to bcl3 cl2 hfo2 high-k zro2 by these_morel on 2006-02-21 09:44:45 as **
  • Ion-enhanced chemical etching of HfO[sub 2] for integration in metal--oxide--semiconductor field effect transistors
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6. (2003), pp. 2420-2427.
    by Lin Sha, Ragesh Puthenkovilakam, You S Lin, Jane P Chang
    posted to dielectric hfo2 high-k by these_morel on 2006-02-21 09:36:28 as **
  • Plasma etching of HfO[sub 2] at elevated temperatures in chlorine-based chemistry
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, No. 1. (2006), pp. 30-40.
    by M Helot, T Chevolleau, L Vallier, O Joubert, E Blanquet, A Pisch, P Mangiagalli, T Lill
    posted to cl2 dielectric etching hfo2 high-k by these_morel on 2006-02-21 09:56:36 as **
  • Single Metal Gate on High-k Gate Stacks for 45nm Low Power CMOS
    Electron Devices Meeting, 2006. IEDM '06. International (2006), pp. 1-4.
    by WJ Taylor, C Capasso, B Min, B Winstead, E Verret, K Loiko, D Gilmer, RI Hegde, J Schaeffer, J Schaeffer, E Luckowski, A Martinez, M Raymond, C Happ, DH Triyoso, S Kalpat, A Haggag, D Roan, JY Nguyen, LB La, L Hebert, J Smith, D Jovanovic, D Burnett, M Foisy, N Cave, PJ Tobin, SB Samavedam, Jr, S Venkatesan
    posted to hfo2 high-k metal-gate tac by these_morel on 2008-05-21 07:12:22 as **
  • notes Evaluation of the effectiveness of H[sub 2] plasmas in removing boron from Si after etching of HfO[sub 2] films in BCl[sub 3] plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 2. (2005), pp. 547-553.
    by C Wang, VM Donnelly
    posted to bcl3 etching hfo2 plasma by these_morel on 2006-02-17 15:28:10 as read
  • Mechanism of Interstitial Oxygen Diffusion in Hafnia
    Physical Review Letters, Vol. 89, No. 22. (12 November 2002), 225901.
    by AS Foster, AL Shluger, RM Nieminen
    posted to oxygen hfo2 by these_morel on 2008-10-17 09:52:39 as read
  • notes Plasma etching of high-k and metal gate materials
    Vacuum, Vol. In Press, Corrected Proof
    by Keisuke Nakamura, Tomohiro Kitagawa, Kazushi Osari, Kazuo Takahashi, Kouichi Ono
    posted to ecr hfo2 high-k metal by these_morel on 2006-02-17 15:39:06 as read
  • notes Improvement in high-k (HfO/sub 2//SiO/sub 2/) reliability by incorporation of fluorine
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International (2005), 4 pp..
    by K Seo, R Sreenivasan, PC Mclntyre, KC Saraswat
    posted to fluorine hfo2 incorporation by these_morel on 2006-12-14 14:01:11 as read
  • Etching characteristics of high-k dielectric HfO[sub 2] thin films in inductively coupled fluorocarbon plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 23, No. 6. (2005), pp. 1691-1697.
    by Kazuo Takahashi, Kouichi Ono, Yuichi Setsuhara
    posted to etching fluorocarbon hfo2 plasma xps by these_morel on 2006-12-13 15:40:29 as read
  • notes Effects of Annealing and Ar Ion Bombardment on the Removal of HfO[sub 2] Gate Dielectric
    Electrochemical and Solid-State Letters, Vol. 7, No. 3. (2004), pp. F18-F20.
    by Jinghao Chen, Won J Yoo, Daniel SH Chan, Dim L Kwong
    posted to ar hf hfo2 high-k icp plasma wet-etching by these_morel on 2006-02-17 15:00:46 as read
  • notes Selective etching of high-k HfO[sub 2] films over Si in hydrogen-added fluorocarbon (CF[sub 4]/Ar/H[sub 2] and C[sub 4]F[sub 8]/Ar/H[sub 2]) plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, No. 3. (2006), pp. 437-443.
    by Kazuo Takahashi, Kouichi Ono
    posted to etching fluorocarbon hfo2 plasmas xps by these_morel on 2006-12-13 15:38:19 as read
  • notes Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 4. (2004), pp. 1552-1558.
    by Jinghao Chen, Won J Yoo, Zerlinda YL Tan, Yingqian Wang, Daniel SH Chan
    posted to xps high-k hfsio hfon hfo2 hfalo hbr-o2 fluorine cl2-o2 by these_morel on 2006-02-17 15:12:43 as read
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