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VLSI Design

Articles from the last few issues of VLSI Design © Taylor and Francis Ltd
  • VLSI Design Special Issue on Semiconductor Device Modeling
    VLSI Design, Vol. 15, No. 4. (1 January 2002), pp. 679-679.
    by CL Gardner
  • Two-valley Hydrodynamical Models for Electron Transport in Gallium Arsenide: Simulation of Gunn Oscillations
    VLSI Design, Vol. 15, No. 4. (1 January 2002), pp. 681-693.
    by AM Anile, SD Hern
  • A Comparison of Resonant Tunneling Based on Schrodingers Equation and Quantum Hydrodynamics
    VLSI Design, Vol. 15, No. 4. (1 January 2002), pp. 695-700.
    by NB Abdallah, O Pinaud, CL Gardner, C Ringhofer
  • Frequency Domain Kernel Estimation for 2nd-order Volterra Models Using Random Multi-tone Excitation
    VLSI Design, Vol. 15, No. 4. (1 January 2002), pp. 701-713.
    by G Bicken, GF Carey, RO Stearman
  • Comparison of Single-Particle Monte Carlo Simulation with Measured Output Characteristics of an 0.1 mum n-MOSFET
    VLSI Design, Vol. 15, No. 4. (1 January 2002), pp. 715-720.
    by FM Bufler, A Schenk, C Zechner, N Inada, Y Asahi, W Fichtner
  • A Comparison of Modern Hyperbolic Methods for Semiconductor Device Simulation: NTK Central Scheme Vs. CLAWPACK
    VLSI Design, Vol. 15, No. 4. (1 January 2002), pp. 721-728.
    by CL Gardner, A Gelb, J Hernandez
  • An Analytical Study of Smooth Solutions of the Blotekjaer Hydrodynamic Model of Electron Transport
    VLSI Design, Vol. 15, No. 4. (1 January 2002), pp. 729-742.
    by JW Jerome
  • Particle-based Full-band Approach for Fast Simulation of Charge Transport in Si, GaAs, and InP
    VLSI Design, Vol. 15, No. 4. (1 January 2002), pp. 743-750.
    by M Saraniti, Y Hu, SM Goodnick
  • Integration of the Density Gradient Model into a General Purpose Device Simulator
    VLSI Design, Vol. 15, No. 4. (1 January 2002), pp. 751-759.
    by A Wettstein, O Penzin, E Lyumkis
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